Solid-state memcapacitor

Details Solid-state memcapacitor Solid-state memcapacitor

2009-12-30

arxiv.org/abs/0912.4921v2

Phys. Rev. B 81, 195430 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.81.195430

We suggest a possible realization of a solid-state memory capacitive (memcapacitive) system. Our approach relies on the slow polarization rate of a medium between plates of a regular capacitor. To achieve this goal, we consider a multi-layer structure embedded in a capacitor. The multi-layer structure is formed by metallic layers separated by an insulator so that non-linear electronic transport (tunneling) between the layers can occur. The suggested memcapacitor shows hysteretic charge-voltage and capacitance-voltage curves, and both negative and diverging capacitance within certain ranges of the field. This proposal can be easily realized experimentally, and indicates the possibility of information storage in memcapacitive devices.

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