Spin polarization of strongly interacting 2D electrons: the role of disorder

Details Spin polarization of strongly interacting 2D electrons: the role of disorder Spin polarization of strongly interacting 2D electrons: the role of disorder

2002-02-21

arxiv.org/abs/cond-mat/0202381v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.65.201106

In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*\mu_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility $\chi^* \propto (g^*m^*)$ exhibits critical behavior of the form $\chi^* \propto (n - n_0)^{-\alpha}$. We examine the significance of the field scale $H_s$ derived from transport measurements, and show that this field signals the onset of full spin polarization only in the absence of disorder. Our results suggest that disorder becomes increasingly important as the electron density is reduced toward the transition.

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