Microwave zero-resistance states in a bilayer electron system

Details Microwave zero-resistance states in a bilayer electron system Microwave zero-resistance states in a bilayer electron system

2010-07-08

arxiv.org/abs/1007.1393v1

PRL 105, 026804 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.105.026804

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.

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