Zero-Resistance States Induced by Electromagnetic-Wave Excitation in GaAs/AlGaAs Heterostructures

Details Zero-Resistance States Induced by Electromagnetic-Wave Excitation in GaAs/AlGaAs Heterostructures Zero-Resistance States Induced by Electromagnetic-Wave Excitation in GaAs/AlGaAs Heterostructures

2004-07-14

arxiv.org/abs/cond-mat/0407367v1

Physica E 22, 1 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Proc. EP2DS-15 [Nara (Japan), 14-18 July 2003]; 5 Pages, 10 Color Figures

Scientific paper

10.1016/j.physe.2003.11.204

We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, $B$, in the large filling factor limit. Vanishing resistance is observed in the vicinity of $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, where m$^{*}$ is the effective mass, e is the charge, and \textit{f} is the microwave frequency. The dependence of the effect is reported as a function of \textit{f}, the temperature, and the power.

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