Zero-bias anomaly in disordered wires

Details Zero-bias anomaly in disordered wires Zero-bias anomaly in disordered wires

2001-06-21

arxiv.org/abs/cond-mat/0106448v2

Phys. Rev. Lett. 87, 246801 (2001).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 1 figure

Scientific paper

10.1103/PhysRevLett.87.246801

We calculate the low-energy tunneling density of states $\nu(\epsilon, T)$ of an $N$-channel disordered wire, taking into account the electron-electron interaction non-perturbatively. The finite scattering rate $1/\tau$ results in a crossover from the Luttinger liquid behavior at higher energies, $\nu\propto\epsilon^\alpha$, to the exponential dependence $\nu (\epsilon, T=0)\propto \exp{(-\epsilon^*/\epsilon)}$ at low energies, where $\epsilon^*\propto 1/(N \tau)$. At finite temperature $T$, the tunneling density of states depends on the energy through the dimensionless variable $\epsilon/\sqrt{\epsilon^* T}$. At the Fermi level $\nu(\epsilon=0,T) \propto \exp (-\sqrt{\epsilon^*/T})$.

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