Zeno Quantum Gates in Semiconductor Quantum Dots

Details Zeno Quantum Gates in Semiconductor Quantum Dots Zeno Quantum Gates in Semiconductor Quantum Dots

2008-10-24

arxiv.org/abs/0810.4489v1

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

We propose a scheme for a two-qubit conditional phase gate by quantum Zeno effect with semiconductor quantum dots. The system consists of two charged dots and one ancillary dot that can perform Rabi oscillations under a resonant laser pulse. The quantum Zeno effect is induced by phonon-assisted exciton relaxation between the ancillary dot and the charged dots, which is equivalent to a continuous measurement. We solve analytically the master equation and simulate the dynamics of the system using a realistic set of parameters. In contrast to standard schemes, larger phonon relaxation rates increase the fidelity of the operations.

Affiliated with

Also associated with

No associations

Rating

Zeno Quantum Gates in Semiconductor Quantum Dots does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Zeno Quantum Gates in Semiconductor Quantum Dots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Zeno Quantum Gates in Semiconductor Quantum Dots will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-698860