Zener tunneling isospin Hall effect in HgTe quantum wells and graphene multilayers

Details Zener tunneling isospin Hall effect in HgTe quantum wells and graphene multilayers Zener tunneling isospin Hall effect in HgTe quantum wells and graphene multilayers

2011-07-18

arxiv.org/abs/1107.3452v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 8 figures. Major changes. The message has been revised and expanded

Scientific paper

A Zener diode is a paradigmatic device in semiconductor-based electronics that consists of a pn junction where an external electric field induces a switching behavior in the current-voltage characteristics. We study Zener tunneling in HgTe quantum wells and graphene multilayers. We find that the tunneling transition probability depends asymmetrically on the parallel momentum of the carriers to the barrier. In HgTe quantum wells the asymmetry is the opposite for each spin, whereas for graphene multilayers it is the opposite for each valley degree of freedom. In both cases, a spin/valley current flowing in the perpendicular direction to the applied field is produced. We relate the origin of this Zener tunneling spin/valley Hall effect to the Berry phase acquired by the carriers when they are adiabatically reflected from the gapped region.

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