X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators

Details X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators

2007-10-16

arxiv.org/abs/0710.3005v1

J. Phys. Soc. Jpn. 76, 123701 (2007)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

10.1143/JPSJ.76.123701

We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators $\kappa$-(ET)$_{2}$$X$ with $X =$ Cu[N(CN)$_{2}$]Cl and Cu$_{2}$(CN)$_{3}$. For $\kappa$-(ET)$_{2}$Cu[N(CN)$_{2}$]Cl, we have observed a large decrease of the resistivity by 40 % with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.

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