X-ray induced persistent photoconductivity in Si-doped Al$_{0.35}$Ga$_{0.65}$As

Details X-ray induced persistent photoconductivity in Si-doped Al$_{0.35}$Ga$_{0.65}$As X-ray induced persistent photoconductivity in Si-doped Al$_{0.35}$Ga$_{0.65}$As

2000-07-11

arxiv.org/abs/cond-mat/0007193v2

Physics

Condensed Matter

Materials Science

3 pages of text, 6 figures. An error in Fig.5 was detected, so we corrected it

Scientific paper

10.1063/1.1410894

We demonstrate that X-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al$_{0.35}$Ga$_{0.65}$As, a semiconductor with {\it DX} centers. The excitation mechanism of the {\it DX} centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident X-ray energy exhibits an edge both at the Ga and As K-edge, implying that core-hole excitation of Ga and As are efficient primary steps for the excitation of {\it DX} centers. A high quantum yield ($\gg 1$) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons.

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