Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?

Details Why does wurtzite form in nanowires of III-V zinc-blende semiconductors? Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?

2007-06-06

arxiv.org/abs/0706.0846v1

Physical Review Letters 99, 146101 (2007)

Physics

Condensed Matter

Materials Science

4 pages with 4 figures Submitted to Physical Review Letters

Scientific paper

10.1103/PhysRevLett.99.146101

We develop a nucleation-based model to explain the formation of the wurtzite (WZ) crystalline phase during the vapor-liquid-solid growth of free-standing nanowires of zinc-blende (ZB) semiconductors. We first show that, in nanowires, nucleation generally occurs at the outer edge of the solid/liquid interface (the triple phase line) rather than elsewhere at the solid/liquid interface. In the present case, this entails major differences between ZB and WZ nuclei. Depending on the pertinent interface energies, WZ nucleation is favored at high liquid supersaturation. This explains our systematic observation of ZB during the early stages of nanowire growth.

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