Well-width dependence of valley splitting in Si/SiGe quantum wells

Details Well-width dependence of valley splitting in Si/SiGe quantum wells Well-width dependence of valley splitting in Si/SiGe quantum wells

2009-11-10

arxiv.org/abs/0911.1847v2

Appl. Phys. Lett. 95, 222109 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 2 figures

Scientific paper

The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $\nu=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations.

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