Well-localized edge states in two-dimensional topological insulators: ultrathin Bi films

Details Well-localized edge states in two-dimensional topological insulators: ultrathin Bi films Well-localized edge states in two-dimensional topological insulators: ultrathin Bi films

2010-05-21

arxiv.org/abs/1005.3912v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well.

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