Weak Localization and Transport Gap in Graphene Antidot Lattices

Details Weak Localization and Transport Gap in Graphene Antidot Lattices Weak Localization and Transport Gap in Graphene Antidot Lattices

2009-01-07

arxiv.org/abs/0901.0840v2

New J. Phys. 11 (2009) 095021

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

some revisions, to appear in New Journal of Physics, Special Issue Graphene

Scientific paper

10.1088/1367-2630/11/9/095021

We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings the quantum Hall effect gradually disappears, following a geometric size effect. Lattices with narrow constrictions between the antidots behave as networks of nanoribbons, showing a high-resistance state and a transport gap of a few mV around the Dirac point. We observe pronounced weak localization in the magnetoresistance, indicating strong intervalley scattering at the antidot edges. The area of phase-coherent paths is bounded by the unit cell size at low temperatures, so each unit cell of the lattice acts as a ballistic cavity.

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