Weak localization and electron-electron interactions in Indium-doped ZnO nanowires

Details Weak localization and electron-electron interactions in Indium-doped ZnO nanowires Weak localization and electron-electron interactions in Indium-doped ZnO nanowires

2009-07-30

arxiv.org/abs/0907.5282v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, Corrected format

Scientific paper

Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum corrections due to weak localization and electron-electron interactions. The anisotropy of the magneto-conductivity agrees with theory. The two quantum corrections are of approximately equal magnitude with respective temperature dependences of T^-1/3 and T^-1/2. The alternative model of quasi-two-dimensional surface conductivity is excluded by the absence of oscillations in the magneto-conductivity in parallel magnetic fields.

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