Weak field magnetoresistance of narrow-gap semiconductor InSb

Details Weak field magnetoresistance of narrow-gap semiconductor InSb Weak field magnetoresistance of narrow-gap semiconductor InSb

2010-12-05

arxiv.org/abs/1012.0968v1

Physics

Condensed Matter

Materials Science

revised

Scientific paper

The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.

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