Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe

Details Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe

2010-12-05

arxiv.org/abs/1012.0969v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

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Scientific paper

Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic features such as quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, weak antilocalization effect in ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted according to Golub's model. The temperature dependence of dephasing rate is consistent with Nyquist mechanism including both singlet and triplet channel interactions.

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