Weak antilocalization effect in LPE-grown p-Hg0.8Cd0.2Te thin film and the evidence of Te-precipitation

Details Weak antilocalization effect in LPE-grown p-Hg0.8Cd0.2Te thin film and the evidence of Te-precipitation Weak antilocalization effect in LPE-grown p-Hg0.8Cd0.2Te thin film and the evidence of Te-precipitation

2010-06-07

arxiv.org/abs/1006.1167v1

Physics

Condensed Matter

Materials Science

Scientific paper

The weak antilocalization effect is observed in a p-type Hg0.8Cd0.2Te thin
film with thickness ~10 micrometers. Based on the analysis of composition,
carrier species and excellent fitting of data with a model concerning weak
antilocalization effect in Te crystal, the most plausible explanation is that
the observed weak antilocalization effect is caused by Te-precipitation.

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