Weak antilocalization and zero-field electron spin splitting in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas

Details Weak antilocalization and zero-field electron spin splitting in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas Weak antilocalization and zero-field electron spin splitting in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas

2006-08-10

arxiv.org/abs/cond-mat/0608254v1

Physics

Condensed Matter

Materials Science

16 pages, 4 figures

Scientific paper

10.1103/PhysRevB.74.113308

Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlGaN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exhibit a weak antilocalization feature with a spin-orbit field of around 1.8 mT. The zero-field electron spin splitting energies extracted from the weak antilocalization measurements are found to scale linearly with the Fermi wavevector with an effective linear spin-orbit coupling parameter 5.5x10^{-13} eV m. The spin-orbit times extracted from our measurements varied from 0.74 to 8.24 ps within the carrier density range of this experiment.

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