Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3

Details Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3 Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3

2012-01-16

arxiv.org/abs/1201.3180v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

In this study, we address the phase coherent transport in a sub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.

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