Wavelength Tunability of Ion-bombardment Induced Ripples on Sapphire

Details Wavelength Tunability of Ion-bombardment Induced Ripples on Sapphire Wavelength Tunability of Ion-bombardment Induced Ripples on Sapphire

2006-08-08

arxiv.org/abs/cond-mat/0608203v1

Physics

Condensed Matter

Materials Science

Revtex4, 19 pages, 10 figures with JPEG format

Scientific paper

A study of ripple formation on sapphire surfaces by 300-2000 eV Ar+ ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range-nearly two orders of magnitude-by changing the ion incidence angle. Within the linear theory regime, the ion induced viscous flow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30. In this model, relaxation is confined to a few-nm thick damaged surface layer. The behavior at high temperature suggests relaxation by surface diffusion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface diffusion or viscous flow relaxation.

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