Wavefronts may move upstream in doped semiconductor superlattices

Details Wavefronts may move upstream in doped semiconductor superlattices Wavefronts may move upstream in doped semiconductor superlattices

2000-03-15

arxiv.org/abs/cond-mat/0003258v1

Phys. Rev. E 61, 4866-4876 (2000)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 11 figures, 2-column RevTex, Phys. Rev. E 61, 1 May 2000

Scientific paper

10.1103/PhysRevE.61.4866

In weakly coupled, current biased, doped semiconductor superlattices, domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and it moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.

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