Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures

Details Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures

2011-06-22

arxiv.org/abs/1106.4419v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 8 figures

Scientific paper

Percolation phenomena are investigated and discussed in three kinds of nanostructures: first two are nanocrystalline silicon-based systems, Si nanodots embedded in amorphous SiO2 matrix and porous silicon formed by an oxidized nanowire network, and the third consisting of a multi-walled carbon nanotube network embedded in amorphous SiN. The current-voltage characteristics measured on first two systems present voltage percolation thresholds with the same shape - a saturation plateau region of the current, followed by an abrupt increase. The current-voltage and conductance-voltage curves measured on multi-walled carbon nanotube network embedded in amorphous SiN present non-periodic and temperature independent oscillations. These oscillations are interpreted as voltage percolation thresholds.

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