Voltage induced control and magnetoresistance of noncollinear frustrated magnets

Details Voltage induced control and magnetoresistance of noncollinear frustrated magnets Voltage induced control and magnetoresistance of noncollinear frustrated magnets

2009-12-30

arxiv.org/abs/0912.5487v1

Phys. Rev. B 82, 094420 (2010)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.82.094420

Noncollinear frustrated magnets are proposed as a new class of spintronic materials with high magnetoresistance which can be controlled with relatively small applied voltages. It is demonstrated that their magnetic configuration strongly depends on position of the Fermi energy and applied voltage. The voltage induced control of noncollinear frustrated materials (VCFM) can be seen as a way to intrinsic control of colossal magnetoresistance (CMR) and is the bulk material counterpart of spin transfer torque concept used to control giant magnetoresistance in layered spin-valve structures.

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