Voltage controlled spin precession in InAs quantum wells

Details Voltage controlled spin precession in InAs quantum wells Voltage controlled spin precession in InAs quantum wells

2010-11-03

arxiv.org/abs/1011.0813v2

Semicond. Sci. Technol. 26, 075005 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

10.1088/0268-1242/26/7/075005

In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate voltage dependence of the spin diffusion under different temperatures is studied with all the scattering explicitly included. Our result partially supports the claim of the realization of the Datta-Das spin-injected field effect transistor by Koo {\it et al.} [Science {\bf 325}, 1515 (2009)]. We also show that the scattering plays an important role in spin diffusion in such a system.

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