Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode

Details Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode

2005-02-25

arxiv.org/abs/cond-mat/0502615v1

Physics

Condensed Matter

Materials Science

Submitted to Phys. Rev. B Rapid Communications

Scientific paper

10.1103/PhysRevB.72.205322

The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Buttiker theory of coherent transport has been developed to study the current spin polarization. This dual approach allows to explain the experimentally observed high magnitude and strong bias dependence of the current spin polarization.

Affiliated with

Also associated with

No associations

Rating

Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-303576