Voltage Control of Exchange Coupling in Phosphorus Doped Silicon

Details Voltage Control of Exchange Coupling in Phosphorus Doped Silicon Voltage Control of Exchange Coupling in Phosphorus Doped Silicon

2004-02-26

arxiv.org/abs/cond-mat/0402642v1

Physics

Condensed Matter

Materials Science

5 Pages, 5 Figures

Scientific paper

10.1088/0953-8984/16/32/006

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance, or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.

Affiliated with

Also associated with

No associations

Rating

Voltage Control of Exchange Coupling in Phosphorus Doped Silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Voltage Control of Exchange Coupling in Phosphorus Doped Silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage Control of Exchange Coupling in Phosphorus Doped Silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-129915