Voltage and temperature dependencies of conductivity in gated graphene

Details Voltage and temperature dependencies of conductivity in gated graphene Voltage and temperature dependencies of conductivity in gated graphene

2007-08-22

arxiv.org/abs/0708.2976v2

PHYSICAL REVIEW B 76, 233404 (2007)

Physics

Condensed Matter

Materials Science

4 pages, 4 Figs

Scientific paper

10.1103/PhysRevB.76.233404

The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by acoustic phonons. The calculations are based on the quasiclassical kinetic equation with the normalization condition fixed by surface charge. The gate-voltage and temperature effects on the resistance peak, which is centered at the point of intrinsic conductivity, are found to be in agreement with the transport measurements.

Affiliated with

Also associated with

No associations

Rating

Voltage and temperature dependencies of conductivity in gated graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Voltage and temperature dependencies of conductivity in gated graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage and temperature dependencies of conductivity in gated graphene will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-135650