Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

Details Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

2011-01-08

arxiv.org/abs/1101.1600v1

Physics

Condensed Matter

Materials Science

Scientific paper

Voids adjacent to both cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in annealed Ga0.995Mn0.005As magnetic semiconductor specimen grown by molecular beam epitaxy. Nano-beam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter from that of bulk MnAs. In situ annealing inside the electron microscope is used to study the nucleation, coalescence, and grain growth of individual nanocrystals. After annealing at 903 K, the magnetic transition temperature of the specimen likely to be dominated by the presence of cubic ferromagnetic nanocrystals.

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