Very low bias stress in n-type organic single crystal transistors

Details Very low bias stress in n-type organic single crystal transistors Very low bias stress in n-type organic single crystal transistors

2012-02-09

arxiv.org/abs/1202.2015v1

Physics

Condensed Matter

Materials Science

Submitted to Applied Physics Letters; 14 pages, 3 figures

Scientific paper

Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants, extracted by fitting the data with a stretched exponential - that are \tau ~ 2\cdot10^9 s in air and \tau ~ 5\cdot10^9 s in vacuum - approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.

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