Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions

Details Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions

2003-08-19

arxiv.org/abs/cond-mat/0308385v1

Phys. rev. Lett. 91, 216602, (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, submited to Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.91.216602

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000 %.

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