Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

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4 pages, 3 figures, submited to Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.91.216602

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000 %.

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