Vertical quantum wire realized with double cleaved-edge overgrowth

Details Vertical quantum wire realized with double cleaved-edge overgrowth Vertical quantum wire realized with double cleaved-edge overgrowth

2006-04-04

arxiv.org/abs/cond-mat/0604083v1

Appl. Phys. Lett. 89, 032102 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1063/1.2222347

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.

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