Vertical magneto-tunneling through a quantum dot and the density of states of small electronic systems

Details Vertical magneto-tunneling through a quantum dot and the density of states of small electronic systems Vertical magneto-tunneling through a quantum dot and the density of states of small electronic systems

2001-02-02

arxiv.org/abs/cond-mat/0102030v1

Physica E 10 (2001) 528 - 534

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Accepted in Physica E

Scientific paper

10.1016/S1386-9477(01)00149-7

One-electron tunneling through a quantum dot with a strong magnetic field in the direction of the current is studied. The linear magneto-conductance is computed for a model parabolic dot with seven electrons in the intermediate states and for different values of the magnetic field. It is shown that the dot density of states at low excitation energies can be extracted from a precise measurement of the conductance at the upper edge of the Coulomb blockade diamond. We parametrized the density of states with a single ``temperature'' parameter (in the so called ``constant temperature approximation''), and found that this parameter depends very weakly on the magnetic field.

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