Vertical Graphene Base Transistor

Details Vertical Graphene Base Transistor Vertical Graphene Base Transistor

2011-12-19

arxiv.org/abs/1112.4520v2

IEEE Electron Device Letters, vol. 33, pp. 691-693 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 3 figures; IEEE Electron Device Letters, Vol.33, Issue 5, (2012)

Scientific paper

10.1109/LED.2012.2189193

We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines.

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