Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing

Details Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing

2008-12-19

arxiv.org/abs/0812.3905v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 6 figures

Scientific paper

10.1103/PhysRevB.79.125313

Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion effects in lower-nitrogen material. The results are important for potential quantum information and magnetometer devices where NV centers must be created in close proximity to a surface for coupling to optical structures.

Affiliated with

Also associated with

No associations

Rating

Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-103607