Versatile sputtering technology for Al2O3 gate insulators on graphene

Details Versatile sputtering technology for Al2O3 gate insulators on graphene Versatile sputtering technology for Al2O3 gate insulators on graphene

2011-10-07

arxiv.org/abs/1110.1535v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition (ALD) with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2/Vs in graphene and 350 cm2/Vs in its bilayer due to increased resonant scattering on atomic scale defects. Most likely this originated from the thin Al precursor layer evaporated prior to sputtering the Al2O3 gate oxide.

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