Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

Details Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

2006-01-23

arxiv.org/abs/cond-mat/0601515v1

Phys. Rev. Lett. 96, 096601 (2006).

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.96.096601

Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

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