Variation of the hopping exponent in disordered silicon MOSFETs

Details Variation of the hopping exponent in disordered silicon MOSFETs Variation of the hopping exponent in disordered silicon MOSFETs

2007-05-29

arxiv.org/abs/0705.4241v10

J. Phys.: Condens. Matter 20, 415226 (2008)

Physics

Condensed Matter

Strongly Correlated Electrons

6 pages, 5 figures

Scientific paper

10.1088/0953-8984/20/41/415226

We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems.

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