Variation of the density of states in amorphous GdSi at the metal-insulator transition

Details Variation of the density of states in amorphous GdSi at the metal-insulator transition Variation of the density of states in amorphous GdSi at the metal-insulator transition

2003-09-26

arxiv.org/abs/cond-mat/0309635v1

Physics

Condensed Matter

Strongly Correlated Electrons

6 pages, 6 figures

Scientific paper

10.1103/PhysRevB.69.235111

We performed detailed conductivity and tunneling mesurements on the amorphous, magnetically doped material $\alpha$-Gd$_x$Si$_{1-x}$ (GdSi), which can be driven through the metal-insulator transition by the application of an external magnetic field. Conductivity increases linearly with field near the transition and slightly slower on the metallic side. The tunneling conductance, proportional to the density of states $N(E)$, undergoes a gradual change with increasing field, from insulating, showing a soft gap at low bias, with a slightly weaker than parabolic energy dependence, i.e. $N(E) \sim E^c$, $c \lesssim 2$, towards metallic behavior, with $E^d$, $0.5 \lt d \lt 1$ energy dependence. The density of states at the Fermi level appears to be zero at low fields, as in an insulator, while the sample shows already small, but metal-like conductivity. We suggest a possible explanation to the observed effect.

Affiliated with

Also associated with

No associations

Rating

Variation of the density of states in amorphous GdSi at the metal-insulator transition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Variation of the density of states in amorphous GdSi at the metal-insulator transition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Variation of the density of states in amorphous GdSi at the metal-insulator transition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-565634