Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

Details Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

2011-06-07

arxiv.org/abs/1106.1326v3

Phys. Rev. B 85, 012504 (2012)

Physics

Condensed Matter

Superconductivity

5 pages, 3 figures; updated to revised version that was accepted for publication, contains data from a reference sample withou

Scientific paper

10.1103/PhysRevB.85.012504

The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles n_qp or the density of quasiparticle states in the gap, characterized by Dynes parameter \gamma. We infer upper bounds n_qp < 0.033 um^-3 and \gamma < 1.6*10^-7 from transport measurements performed on Al/AlOx/Cu single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, typical number of quasiparticles in the superconducting leads is zero.

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