Physics – Condensed Matter – Materials Science
Scientific paper
2010-05-04
New Journal of Physics 12 (2010) 103038
Physics
Condensed Matter
Materials Science
18 pages, 4 figures
Scientific paper
Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van der Waal epitaxy of Bi2Se3 to proceed. By employing vicinal Si(111) substrate surfaces, the in-pane growth rate anisotropy of Bi2Se3 is explored to achieve single crystalline Bi2Se3 epifilms, in which threading defects and twins are effectively suppressed. Optimization of the growth parameters has resulted in vicinal Bi2Se3 films showing a carrier mobility of ~ 2000 cm2V-1s-1 and the background doping of ~ 3 x 1018 cm-3 of the as-grown layers. Such samples not only show relatively high magnetoresistance but also a linear dependence on magnetic field.
Guo Xiaofeng
He H. T.
Kan Xingye
Li H. D.
Wang Jenn-Nan
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