Physics – Condensed Matter – Materials Science
Scientific paper
2006-08-09
Physics
Condensed Matter
Materials Science
13 pages, 7 figures. Version submitted to PRB
Scientific paper
We present an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter, $v_v$, which encapsulates the physics of the quantum well interface. The new effective mass parameter is computed by means of a tight binding theory. The resulting formalism provides rather simple analytical results for several geometries of interest, including a finite square well, a quantum well in an electric field, and a modulation doped two-dimensional electron gas. Of particular importance is the problem of a quantum well in a magnetic field, grown on a miscut substrate. The latter may pose a numerical challenge for atomistic techniques like tight-binding, because of its two-dimensional nature. In the effective mass theory, however, the results are straightforward and analytical. We compare our effective mass results with those of the tight binding theory, obtaining excellent agreement.
Chutia Sucismita
Coppersmith Susan N.
Friesen Mark
Tahan Charles
No associations
LandOfFree
Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-311381