Valley splitting of Si/SiGe heterostructures in tilted magnetic fields

Details Valley splitting of Si/SiGe heterostructures in tilted magnetic fields Valley splitting of Si/SiGe heterostructures in tilted magnetic fields

2006-01-27

arxiv.org/abs/cond-mat/0601637v1

Phys. Rev. B 73, 161301(R) (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

REVTEX 4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.73.161301

We have investigated the valley splitting of two-dimensional electrons in high quality Si/Si$_{1-x}$Ge$_x$ heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor $\nu=3$ ($\Delta_3$) is significantly different before and after the coincidence angle, at which energy levels cross at the Fermi level. On both sides of the coincidence, a linear density dependence of $\Delta_3$ on the electron density was observed, while the slope of these two configurations differs by more than a factor of two. We argue that screening of the Coulomb interaction from the low-lying filled levels, which also explains the observed spin-dependent resistivity, is responsible for the large difference of $\Delta_3$ before and after the coincidence.

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