Valley filter in strain engineered graphene

Details Valley filter in strain engineered graphene Valley filter in strain engineered graphene

2010-05-27

arxiv.org/abs/1005.5088v2

Appl. Phys. Lett. 97, 043508 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures; minor corrections, updated Figs. 2 and 3, added references

Scientific paper

10.1063/1.3473725

We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic gates. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, the output current can be made to consist of only a single valley contribution. Perfect valley filtering is achievable within experimentally accessible parameters.

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