Valence state manipulation of single Fe impurities in GaAs by STM

Details Valence state manipulation of single Fe impurities in GaAs by STM Valence state manipulation of single Fe impurities in GaAs by STM

2012-03-28

arxiv.org/abs/1203.6293v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 5 figures

Scientific paper

The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend strongly on its charge state. We demonstrate that an applied tip voltage can be used to manipulate the valence and spin state of single Fe impurities in GaAs. In particular we can induce a transition from the Fe{3+)- 3d5 - isoelectronic state to the Fe{2+} - 3d6 - ionized acceptor state with an associated change of the spin moment. Fe atoms sometimes produce dark anisotropic features in topographic maps, which is consistent with an interference between different tunneling paths.

Affiliated with

Also associated with

No associations

Rating

Valence state manipulation of single Fe impurities in GaAs by STM does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Valence state manipulation of single Fe impurities in GaAs by STM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Valence state manipulation of single Fe impurities in GaAs by STM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-273131