Valence band orbital polarization in III-V ferromagnetic semiconductors

Details Valence band orbital polarization in III-V ferromagnetic semiconductors Valence band orbital polarization in III-V ferromagnetic semiconductors

2008-01-04

arxiv.org/abs/0801.0673v1

Physics

Condensed Matter

Materials Science

5 pages, 2 figures

Scientific paper

10.1103/PhysRevB.77.073304

The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the As K absorption edge, yielding an As 4p orbital magnetic moment of around -0.1 Bohr magnetons per valence band hole. This is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the Ga K edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn 4p states to the Mn K edge spectra.

Affiliated with

Also associated with

No associations

Rating

Valence band orbital polarization in III-V ferromagnetic semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Valence band orbital polarization in III-V ferromagnetic semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Valence band orbital polarization in III-V ferromagnetic semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-379642