Vacancy-assisted domain-growth in asymmetric binary alloys: a Monte Carlo study

Details Vacancy-assisted domain-growth in asymmetric binary alloys: a Monte Carlo study Vacancy-assisted domain-growth in asymmetric binary alloys: a Monte Carlo study

1999-05-12

arxiv.org/abs/cond-mat/9905163v1

Physics

Condensed Matter

21 pages, 9 figures, accepted for publication in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.60.3920

A Monte Carlo simulation study of the vacancy-assisted domain-growth in asymmetric binary alloys is presented. The system is modeled using a three-state ABV Hamiltonian which includes an asymmetry term, not considered in previous works. Our simulated system is a stoichiometric two-dimensional binary alloy with a single vacancy which evolves according to the vacancy-atom exchange mechanism. We obtain that, compared to the symmetric case, the ordering process slows down dramatically. Concerning the asymptotic behavior it is algebraic and characterized by the Allen-Cahn growth exponent x=1/2. The late stages of the evolution are preceded by a transient regime strongly affected by both the temperature and the degree of asymmetry of the alloy. The results are discussed and compared to those obtained for the symmetric case.

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