UV-Photoinduced Defects In Ge-Doped Optical Fibers

Details UV-Photoinduced Defects In Ge-Doped Optical Fibers UV-Photoinduced Defects In Ge-Doped Optical Fibers

2005-07-17

arxiv.org/abs/cond-mat/0507405v1

Proceedings of WFOPC2005, IEEE Catalog Number 05EX1021, S. Riva-Sanseverino, M. Artiglia Ed

Physics

Condensed Matter

Materials Science

5 pages, 7 figures

Scientific paper

We investigated the effect of continuous-wave (cw) UV laser radiation on single-mode Ge-doped H2- loaded optical fibers. An innovative technique was developed to measure the optical absorption (OA) induced in the samples by irradiation, and to study its dependence from laser fluence. The combined use of the electron spin resonance (ESR) technique allowed the structural identification of several radiation-induced point defects, among which the Ge(1) (GeO4 -) is found to be responsible of induced OA in the investigated spectral region.

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