Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices

Details Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices

2011-10-24

arxiv.org/abs/1110.5205v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 7 figures, a report to MIEL 2012

Scientific paper

Methods of extraction of interface trap level density in graphene
field-effect devices from the capacitance-voltage measurements are described
and discussed. Interrelation with the graphene Fermi velocity extraction is
shown. Similarities and differences in interface trap extraction procedure in
graphene and silicon field-effect structures are briefly discussed.

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