Unusually wide plateau of quantized Hall resistance in a quasi bilayer hole system inside the p-GeSi / Ge / p-GeSi quantum well

Details Unusually wide plateau of quantized Hall resistance in a quasi bilayer hole system inside the p-GeSi / Ge / p-GeSi quantum well Unusually wide plateau of quantized Hall resistance in a quasi bilayer hole system inside the p-GeSi / Ge / p-GeSi quantum well

1999-03-17

arxiv.org/abs/cond-mat/9903265v1

JETP Lett. 70, 301 (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1134/1.568169

An unusually wide plateau in the quantized Hall resistance has been revealed for a MQW heterostructure of wide p-GeSi / Ge / p-GeSi quantum wells with the Fermi energy comparable to the well bottom bending amplitude. This plateau exists in one of two metastable states of the sample, for which a symmetric quasi-double-quantum-well system is formed inside the Ge layer, and corresponds to the filling factor nu = 1 for each of two sublayers in the Ge layer. The plateau exists not only within a magnetic field range related to the quantum-Hall liquid, but extends beyond it into a so-called quantized Hall insulator phase. For the other metastable state only a weak plateau is observed in the Hall resistivity, corresponding to nu = 1 per Ge layer as a whole. According to the existing theories, the extra wide plateau may be indicative of a kind of disorder in a conducting layer, characterized by a uniform distribution of puddles in their carrier density and by their small average size. We attribute the differences between these two states to the existence of two metastable modes in the self consistent potential profile that settle spontaneously in the multilayer system, which are characterized by different distributions of holes in the quantum well cross-section.

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