Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi0.85Zr0.15O3:Ta Ferroelectric Ceramics

Details Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi0.85Zr0.15O3:Ta Ferroelectric Ceramics Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi0.85Zr0.15O3:Ta Ferroelectric Ceramics

2005-03-10

arxiv.org/abs/cond-mat/0503248v1

Chem. Mater., 17 (7), 1711 -1716, 2005

Physics

Condensed Matter

Materials Science

19 pages, 6 figures, to appear in Chem. Mater. (May 3, 2005). http://dx.doi.org/10.1021/cm050145a

Scientific paper

The dielectric properties of tantalum doped BaTi0.85Zr0.15O3 were investigated. The conventional solid state reaction method was used to make the ceramic samples. The composition was close to the pinch point of the three structure phase transitions in BaTiO3. Powder X-ray diffraction result indicated that the samples were in very slightly distorted rhombohedral structure at room temperature, and the dielectric measurement showed only cubic-to-rhombohedral phase transition occurred. Instead of a sharp peak characteristic of a ferroelectric (FE) transition, the large dielectric response was similar to those in nonferroelectric perovskites CaCu3Ti4O12, AFe1/2B1/2O3 (A=Ba, Sr, Ca; B=Nb, Ta, Sb) and IBLC (Internal Barrier Layer Capacitance) BaTiO3 based FE ceramics. However, unlike its FE analogue, the conventional BaTiO3 based IBLC ceramics, our samples showed weaker temperature dependence of relative permittivity which spans over a wide temperature range. A Maxwell-Wagner type relaxation in the FE state was observed. Moreover, another relaxation mode appears from the vicinity of FE phase transition temperature TC, and extends over a narrow temperature range, with unusual slowing down of relaxation rate as temperature rises, which is contrary to what is commonly observed. We associate these unusual phenomena with the very slightly distorted rhombohedral structure of our samples and the presence of the grain boundary barrier layer where oxygen vacancies distribute non-homogeneously.

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